Best Facial Moisturizer with Hyaluronic & Lactic Acid | GEN Skincare

$15.87

Discover the ultimate hydration solution for your skin with GEN’s Facial Moisturizer. Packed with powerful ingredients like Hyaluronic Acid and Lactic Acid, this moisturizer for dry to normal skin and even sensitive skin, deeply nourishes and revitalizes your skin, leaving it looking plump, smooth, and radiant. Say goodbye to dryness and hello to a more youthful complexion with GEN’s Facial Moisturizer.

Free shipping on orders over $50!

  • Check Mark Satisfaction Guaranteed
  • Check Mark No Hassle Refunds
  • Check Mark Secure Payments
GUARANTEED SAFE CHECKOUT
  • Visa Card
  • MasterCard
  • American Express
  • Discover Card
  • PayPal

Description

Quench your skin’s thirst with GEN’s Hyaluronic Acid Facial Moisturizer! Infused with powerhouse ingredients like hyaluronic acid and lactic acid, this lightweight moisturizer delivers deep, long-lasting moisture. While also protecting your skin with SPF 50 sun protection.

In fact, this lactic acid facial moisturizer is your skin’s new best friend. The hyaluronic acid draws in and locks in moisture, while the lactic acid gently whisks away dull, flaky skin and hyperpigmentation to reveal a smoother, more youthful-looking complexion. Moreover, with broad spectrum SPF 50, you can rest assured your skin is protected from sun damage that can lead to premature aging, dark spots, and wrinkles. Suitable for all skin types, this daily moisturizer is your ticket to a healthy, glowing complexion.

Whether your skin is dry, oily, or somewhere in between, this versatile moisturizer will quench its thirst and leave you with a luminous, healthy-looking glow. Treat your skin to the nourishing, protective care it deserves with our Facial Moisturizer with Hyaluronic Acid & Lactic Acid.

Additional information

Weight 24 kg
Dimensions 4 × 4 × 4 cm

Reviews

There are no reviews yet.

Be the first to review “Best Facial Moisturizer with Hyaluronic & Lactic Acid | GEN Skincare”

Your email address will not be published. Required fields are marked *